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Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Voltage - Rated | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Input Type | Frequency | Technology | Power - Max | Input | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | Other Names | ECCN | HTSUS | Standard Package | Configuration | FET Type | Current Rating (Amps) | Test Condition | Current - Test | Power - Output | Gain | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Noise Figure | IGBT Type | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Current - Collector Pulsed (Icm) | Vce(on) (Max) @ Vge, Ic | Switching Energy | Gate Charge | Td (on/off) @ 25°C | Voltage - Test | Current - Collector Cutoff (Max) | NTC Thermistor | Input Capacitance (Cies) @ Vce | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Resistor - Base (R1) | Resistor - Emitter Base (R2) |
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IPB60R060P7ATMA1 | 6.8000 | ![]() |
4517 | 0.00000000 | Infineon Technologies | CoolMOS™ P7 | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | IPB60R060 | MOSFET (Metal Oxide) | PG-TO263-3 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 600 V | 48A (Tc) | 10V | 60mOhm @ 15.9A, 10V | 4V @ 800µA | 67 nC @ 10 V | ±20V | 2895 pF @ 400 V | - | 164W (Tc) | ||||||||||||||||||||||||||||||||
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NVTFS6H860NLTAG | 1.1400 | ![]() |
1493 | 0.00000000 | onsemi | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerWDFN | NVTFS6 | MOSFET (Metal Oxide) | 8-WDFN (3.3x3.3) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | 488-NVTFS6H860NLTAGTR | EAR99 | 8541.29.0095 | 1,500 | N-Channel | 80 V | 8.1A (Ta), 30A (Tc) | 4.5V, 10V | 20mOhm @ 5A, 10V | 2V @ 30µA | 12 nC @ 10 V | ±20V | 610 pF @ 40 V | - | 3.1W (Ta), 42W (Tc) | |||||||||||||||||||||||||||||||
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2SC4521T-TD-E-SY | 0.2000 | ![]() |
89 | 0.00000000 | Sanyo | * | Bulk | Active | - | Not applicable | 1 (Unlimited) | Vendor Undefined | EAR99 | 8541.29.0075 | 1,000 | |||||||||||||||||||||||||||||||||||||||||||||||||
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2SB1229S-AA | 0.1700 | ![]() |
16 | 0.00000000 | onsemi | * | Bulk | Active | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.21.0075 | 1 | |||||||||||||||||||||||||||||||||||||||||||||||||
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PJMF900N60E1_T0_00001 | 1.3800 | ![]() |
1 | 0.00000000 | Panjit International Inc. | - | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack, Isolated Tab | PJMF900 | MOSFET (Metal Oxide) | ITO-220AB-F | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 600 V | 4.4A (Tc) | 10V | 900mOhm @ 1.5A, 10V | 4V @ 250µA | 11.5 nC @ 10 V | ±30V | 344 pF @ 400 V | - | 23.6W (Tc) | ||||||||||||||||||||||||||||||||
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SFR9214TM | 0.2400 | ![]() |
412 | 0.00000000 | Fairchild Semiconductor | - | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | TO-252-3 (DPAK) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Affected | EAR99 | 8541.29.0095 | 2,500 | P-Channel | 250 V | 1.53A (Tc) | 10V | 4Ohm @ 770mA, 10V | 4V @ 250µA | 11 nC @ 10 V | ±30V | 295 pF @ 25 V | - | 2.5W (Ta), 19W (Tc) | |||||||||||||||||||||||||||||||||
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2C5337-MSCL | 9.6300 | ![]() |
2410 | 0.00000000 | Microchip Technology | * | Bulk | Active | - | REACH Unaffected | 150-2C5337-MSCL | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||
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SIDR570EP-T1-RE3 | 3.0300 | ![]() |
8461 | 0.00000000 | Vishay Siliconix | TrenchFET® Gen V | Tape & Reel (TR) | Active | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 | MOSFET (Metal Oxide) | PowerPAK® SO-8DC | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 150 V | 30.8A (Ta), 90.9A (Tc) | 7.5V, 10V | 7.9mOhm @ 20A, 10V | 4V @ 250µA | 71 nC @ 10 V | ±20V | 3740 pF @ 75 V | - | 7.5W (Ta), 150W (Tc) | |||||||||||||||||||||||||||||||||||
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UMH1N | 0.0270 | ![]() |
300 | 0.00000000 | Yangjie Technology | - | Tape & Reel (TR) | Active | Surface Mount | 6-TSSOP, SC-88, SOT-363 | UMH1 | 150mW | SOT-363 | - | RoHS Compliant | REACH Unaffected | 4617-UMH1NTR | EAR99 | 3,000 | 50V | 100mA | 500nA | 2 NPN - Pre-Biased (Dual) | 300mV @ 500µA, 10mA | 56 @ 5mA, 5V | 250MHz | 22kOhms | - | ||||||||||||||||||||||||||||||||||||
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JANTX2N3635UB/TR | 15.5610 | ![]() |
8259 | 0.00000000 | Microchip Technology | Military, MIL-PRF-19500/357 | Tape & Reel (TR) | Active | -65°C ~ 200°C (TJ) | Surface Mount | 3-SMD, No Lead | 1.5 W | 3-SMD | - | ROHS3 Compliant | REACH Unaffected | 150-JANTX2N3635UB/TR | EAR99 | 8541.29.0095 | 1 | 140 V | 1 A | 10µA | PNP | 600mV @ 5mA, 50mA | 100 @ 50mA, 10V | - | |||||||||||||||||||||||||||||||||||||
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NTB45N06T4 | - | ![]() |
1626 | 0.00000000 | onsemi | - | Bulk | Obsolete | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | NTB45 | MOSFET (Metal Oxide) | D²PAK | download | RoHS non-compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 800 | N-Channel | 60 V | 45A (Ta) | 26mOhm @ 22.5A, 10V | 4V @ 250µA | 46 nC @ 10 V | 1725 pF @ 25 V | - | ||||||||||||||||||||||||||||||||||||
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MMBT5551 | 0.0266 | ![]() |
336 | 0.00000000 | Diotec Semiconductor | - | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 250 mW | SOT-23-3 (TO-236) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | 2796-MMBT5551TR | 8541.21.0000 | 3,000 | 160 V | 600 mA | 50nA (ICBO) | NPN | 200mV @ 5mA, 50mA | 80 @ 10mA, 5V | 300MHz | |||||||||||||||||||||||||||||||||||||
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IMW65R083M1HXKSA1 | 11.0700 | ![]() |
119 | 0.00000000 | Infineon Technologies | CoolSiC™ | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | IMW65R | SiCFET (Silicon Carbide) | PG-TO247-3-41 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 30 | N-Channel | 650 V | 24A (Tc) | 18V | 111mOhm @ 11.2A, 18V | 5.7V @ 3.3mA | 19 nC @ 18 V | +20V, -2V | 624 pF @ 400 V | - | 104W (Tc) | ||||||||||||||||||||||||||||||||
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JANTX2N6802 | - | ![]() |
3743 | 0.00000000 | Microsemi Corporation | Military, MIL-PRF-19500/557 | Bulk | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-205AF Metal Can | MOSFET (Metal Oxide) | TO-205AF (TO-39) | - | RoHS non-compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1 | N-Channel | 500 V | 2.5A (Tc) | 10V | 1.6Ohm @ 2.5A, 10V | 4V @ 250µA | 33 nC @ 10 V | ±20V | - | 800mW (Ta), 25W (Tc) | ||||||||||||||||||||||||||||||||||
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STF25N60M2-EP | 2.8600 | ![]() |
360 | 0.00000000 | STMicroelectronics | MDmesh™ M2-EP | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | STF25 | MOSFET (Metal Oxide) | TO-220FP | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | 497-15886-5 | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 18A (Tc) | 10V | 188mOhm @ 9A, 10V | 4.75V @ 250µA | 29 nC @ 10 V | ±25V | 1090 pF @ 100 V | - | 30W (Tc) | |||||||||||||||||||||||||||||||
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CSD17552Q5A | 1.0900 | ![]() |
2 | 0.00000000 | Texas Instruments | NexFET™ | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | CSD17552 | MOSFET (Metal Oxide) | 8-VSONP (5x6) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 30 V | 17A (Ta), 60A (Tc) | 4.5V, 10V | 6.2mOhm @ 15A, 10V | 1.9V @ 250µA | 12 nC @ 4.5 V | ±20V | 2050 pF @ 15 V | - | 3W (Ta) | ||||||||||||||||||||||||||||||||
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DMT47M2LDVQ-7 | 1.1000 | ![]() |
2 | 0.00000000 | Diodes Incorporated | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | DMT47 | MOSFET (Metal Oxide) | 2.34W (Ta), 14.8W (Tc) | PowerDI3333-8 (Type UXC) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 2,000 | 2 N-Channel (Dual) | 40V | 11.9A (Ta), 30.2A (Tc) | 10.8mOhm @ 20A, 10V | 2.3V @ 250µA | 14nC @ 10V | 891pF @ 20V | - | ||||||||||||||||||||||||||||||||||
DMN61D9U-13 | - | ![]() |
1141 | 0.00000000 | Diodes Incorporated | - | Tape & Reel (TR) | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | DMN61 | MOSFET (Metal Oxide) | SOT-23-3 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | DMN61D9U-13DI | EAR99 | 8541.21.0095 | 10,000 | N-Channel | 60 V | 380mA (Ta) | 1.8V, 5V | 2Ohm @ 50mA, 5V | 1V @ 250µA | 0.4 nC @ 4.5 V | ±20V | 28.5 pF @ 30 V | - | 370mW (Ta) | ||||||||||||||||||||||||||||||||
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RF1S30P06 | - | ![]() |
1602 | 0.00000000 | Harris Corporation | * | Bulk | Active | RF1S | - | - | RoHS non-compliant | 1 (Unlimited) | Vendor Undefined | EAR99 | 0000.00.0000 | 1 | - | ||||||||||||||||||||||||||||||||||||||||||||||
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CTLDM8002A-M621H TR | - | ![]() |
2800 | 0.00000000 | Central Semiconductor Corp | - | Tape & Reel (TR) | Obsolete | -65°C ~ 150°C (TJ) | Surface Mount | 6-XFDFN Exposed Pad | MOSFET (Metal Oxide) | TLM621H | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 50 V | 280mA (Ta) | 5V, 10V | 2.5Ohm @ 500mA, 10V | 2.5V @ 250µA | 0.72 nC @ 4.5 V | 20V | 70 pF @ 25 V | - | 1.6W (Ta) | |||||||||||||||||||||||||||||||||||
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SIHB22N60ET1-GE3 | 3.5600 | ![]() |
9622 | 0.00000000 | Vishay Siliconix | E | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | SIHB22 | MOSFET (Metal Oxide) | D²PAK (TO-263) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 800 | N-Channel | 600 V | 21A (Tc) | 10V | 180mOhm @ 11A, 10V | 4V @ 250µA | 86 nC @ 10 V | ±30V | 1920 pF @ 100 V | - | 227W (Tc) | ||||||||||||||||||||||||||||||||||
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IRG4BC10S | - | ![]() |
1212 | 0.00000000 | Infineon Technologies | - | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | Standard | 38 W | TO-220AB | download | RoHS non-compliant | 1 (Unlimited) | REACH Unaffected | *IRG4BC10S | EAR99 | 8541.29.0095 | 50 | 480V, 8A, 100Ohm, 15V | - | 600 V | 14 A | 18 A | 1.8V @ 15V, 8A | 140µJ (on), 2.58mJ (off) | 15 nC | 25ns/630ns | |||||||||||||||||||||||||||||||||
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FF150R12KS4HOSA1 | 159.2800 | ![]() |
2586 | 0.00000000 | Infineon Technologies | C | Tray | Active | -40°C ~ 125°C | Chassis Mount | Module | FF150R12K | 1250 W | Standard | Module | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 10 | 2 Independent | - | 1200 V | 225 A | 3.7V @ 15V, 150A | 5 mA | No | 11 nF @ 25 V | ||||||||||||||||||||||||||||||||||
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FDS7296N3 | 1.0700 | ![]() |
2 | 0.00000000 | Fairchild Semiconductor | PowerTrench® | Bulk | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | 8-SO | download | ROHS3 Compliant | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 30 V | 15A (Ta) | 4.5V, 10V | 8mOhm @ 15A, 10V | 3V @ 250µA | 32 nC @ 10 V | ±20V | 1540 pF @ 15 V | - | 3W (Ta) | |||||||||||||||||||||||||||||||||||
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FDU6682 | 0.6100 | ![]() |
188 | 0.00000000 | Fairchild Semiconductor | PowerTrench® | Bulk | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | MOSFET (Metal Oxide) | TO-251 (IPAK) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Affected | EAR99 | 8541.29.0095 | 1 | N-Channel | 30 V | 75A (Ta) | 4.5V, 10V | 6.2mOhm @ 17A, 10V | 3V @ 250µA | 31 nC @ 5 V | ±20V | 2400 pF @ 15 V | - | 1.6W (Ta) | |||||||||||||||||||||||||||||||||
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BSS123K-TP | 0.2500 | ![]() |
26 | 0.00000000 | Micro Commercial Co | - | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | BSS123 | MOSFET (Metal Oxide) | SOT-23 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 100 V | 170mA (Tj) | 4.5V, 10V | 6Ohm @ 250mA, 10V | 2.5V @ 250µA | 2 nC @ 10 V | ±20V | 60 pF @ 25 V | - | 350mW | ||||||||||||||||||||||||||||||||
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IPP126N10N3G | - | ![]() |
3366 | 0.00000000 | Infineon Technologies | OptiMOS™ 3 | Bulk | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | PG-TO220-3 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 68 | N-Channel | 100 V | 58A (Tc) | 12.6mOhm @ 46A, 10V | 3.5V @ 46µA | 35 nC @ 10 V | ±20V | 2500 pF @ 50 V | - | 94W (Tc) | ||||||||||||||||||||||||||||||||||
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MRF5S21100HSR3 | 54.8800 | ![]() |
334 | 0.00000000 | Freescale Semiconductor | - | Bulk | Active | 65 V | Chassis Mount | NI-780S | 2.11GHz ~ 2.17GHz | LDMOS | NI-780S | download | ROHS3 Compliant | 1 (Unlimited) | Vendor Undefined | EAR99 | 0000.00.0000 | 250 | 10µA | 1.05 A | 23W | 13.5dB | - | 28 V | |||||||||||||||||||||||||||||||||||||
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2SK3666-2-TB-E | - | ![]() |
9851 | 0.00000000 | Sanyo | * | Bulk | Active | download | EAR99 | 8541.21.0095 | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||
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FQB34N20LTM | 1.0000 | ![]() |
5650 | 0.00000000 | Fairchild Semiconductor | QFET® | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | D2PAK (TO-263) | download | EAR99 | 8542.39.0001 | 1 | N-Channel | 200 V | 31A (Tc) | 5V, 10V | 75mOhm @ 15.5A, 10V | 2V @ 250µA | 72 nC @ 5 V | ±20V | 3900 pF @ 25 V | - | 3.13W (Ta), 180W (Tc) |
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