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Discrete Semiconductor Products(2909)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | Other Names | ECCN | HTSUS | Standard Package | Configuration | Speed | FET Type | Gain | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Diode Type | Voltage - Peak Reverse (Max) | Current - Collector Cutoff (Max) | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Resistor - Base (R1) | Resistor - Emitter Base (R2) | Noise Figure (dB Typ @ f) | Capacitance Ratio | Capacitance Ratio Condition | Q @ Vr, F |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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2SC2235-Y(T6CANOFM | - |  |
1780 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SC2235 | 900 mW | TO-92MOD | download | 1 (Unlimited) | 2SC2235YT6CANOFM | EAR99 | 8541.21.0075 | 1 | 120 V | 800 mA | 100nA (ICBO) | NPN | 1V @ 50mA, 500mA | 80 @ 100mA, 5V | 120MHz | ||||||||||||||||||||||||||||||||
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SSM3K7002KFU,LXH | 0.4000 | |
5 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | 150°C | Surface Mount | SC-70, SOT-323 | MOSFET (Metal Oxide) | USM | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 60 V | 400mA (Ta) | 4.5V, 10V | 1.5Ohm @ 100mA, 10V | 2.1V @ 250µA | 0.6 nC @ 4.5 V | ±20V | 40 pF @ 10 V | - | 150mW (Ta) | ||||||||||||||||||||||||||||||
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2SC5886A,L1XHQ(O | - | |
7632 | 0.00000000 | Toshiba Semiconductor and Storage | * | Tape & Reel (TR) | Active | 2SC5886 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | ||||||||||||||||||||||||||||||||||||||||||||
 |
TK20J60U(F) | - | |
2851 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSII | Tray | Obsolete | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TK20J60 | MOSFET (Metal Oxide) | TO-3P(N) | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 20A (Ta) | 10V | 190mOhm @ 10A, 10V | 5V @ 1mA | 27 nC @ 10 V | ±30V | 1470 pF @ 10 V | - | 190W (Tc) | ||||||||||||||||||||||||||||
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SSM6K781G,LF | 0.5100 | |
850 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVII-H | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 6-UFBGA, WLCSP | SSM6K781 | MOSFET (Metal Oxide) | 6-WCSPC (1.5x1.0) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 12 V | 7A (Ta) | 1.5V, 4.5V | 18mOhm @ 1.5A, 4.5V | 1V @ 250µA | 5.4 nC @ 4.5 V | ±8V | 600 pF @ 6 V | - | 1.6W (Ta) | ||||||||||||||||||||||||||||
 |
RN2605(TE85L,F) | 0.4700 | |
12 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-74, SOT-457 | RN2605 | 300mW | SM6 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 100nA (ICBO) | 2 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 200MHz | 2.2kOhms | 47kOhms | |||||||||||||||||||||||||||||||
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SSM3K15F,LF | 0.2300 | |
72 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSIV | Tape & Reel (TR) | Active | 150°C | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SSM3K15 | MOSFET (Metal Oxide) | S-Mini | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 30 V | 100mA (Ta) | 2.5V, 4V | 4Ohm @ 10mA, 4V | 1.5V @ 100µA | ±20V | 7.8 pF @ 3 V | - | 200mW (Ta) | |||||||||||||||||||||||||||||
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2SC4915-Y,LF | 0.4400 | |
9 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 125°C (TJ) | Surface Mount | SC-75, SOT-416 | 2SC4915 | 100mW | SSM | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 17dB ~ 23dB | 30V | 20mA | NPN | 100 @ 1mA, 6V | 550MHz | 2.3dB ~ 5dB @ 100MHz | ||||||||||||||||||||||||||||||||
|
2SA1943-O(S1,F | 2.9200 | |
20 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 150°C (TJ) | Through Hole | TO-3PL | 150 W | TO-3P(L) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 25 | 230 V | 15 A | 5µA (ICBO) | PNP | 3V @ 800mA, 8A | 80 @ 1A, 5V | 30MHz | |||||||||||||||||||||||||||||||||
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RN1906FE,LF(CT | 0.2400 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOT-563, SOT-666 | RN1906 | 100mW | ES6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 50V | 100mA | 500nA | 2 NPN - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 250MHz | 4.7kOhms | 47kOhms | |||||||||||||||||||||||||||||||
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RN4901,LF | - | |
2952 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | Surface Mount | 6-TSSOP, SC-88, SOT-363 | RN4901 | 200mW | US6 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 500nA | 1 NPN, 1 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 30 @ 10mA, 5V | 200MHz, 250MHz | 4.7kOhms | 4.7kOhms | ||||||||||||||||||||||||||||||||
|
TTD1509B,Q(S | - | |
2966 | 0.00000000 | Toshiba Semiconductor and Storage | * | Tube | Active | TTD1509 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0075 | 250 | ||||||||||||||||||||||||||||||||||||||||||||
 |
TK25N60X5,S1F | 4.5900 | |
8939 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV-H | Tube | Active | 150°C (TJ) | Through Hole | TO-247-3 | TK25N60 | MOSFET (Metal Oxide) | TO-247 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 30 | N-Channel | 600 V | 25A (Ta) | 10V | 140mOhm @ 7.5A, 10V | 4.5V @ 1.2mA | 60 nC @ 10 V | ±30V | 2400 pF @ 300 V | - | 180W (Tc) | ||||||||||||||||||||||||||||
 |
TK14A65W5,S5X | 2.8900 | |
4496 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK14A65 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 650 V | 13.7A (Ta) | 10V | 300mOhm @ 6.9A, 10V | 4.5V @ 690µA | 40 nC @ 10 V | ±30V | 1300 pF @ 300 V | - | 40W (Tc) | ||||||||||||||||||||||||||||
|
RN1108(T5L,F,T) | 0.2300 | |
1 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-75, SOT-416 | RN1108 | 100 mW | SSM | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 500nA | NPN - Pre-Biased | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 250 MHz | 22 kOhms | 47 kOhms | |||||||||||||||||||||||||||||||
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TPN14006NH,L1Q | 0.3533 | |
4019 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 8-PowerVDFN | TPN14006 | MOSFET (Metal Oxide) | 8-TSON Advance (3.1x3.1) | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 60 V | 13A (Ta) | 6.5V, 10V | 14mOhm @ 6.5A, 10V | 4V @ 200µA | 15 nC @ 10 V | ±20V | 1300 pF @ 30 V | - | 700mW (Ta), 30W (Tc) | ||||||||||||||||||||||||||||
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TPCP8203(TE85L,F) | - | |
5326 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | TPCP8203 | MOSFET (Metal Oxide) | 360mW | PS-8 (2.9x2.4) | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 2 N-Channel (Dual) | 40V | 4.7A | - | 2.5V @ 1mA | - | - | - | |||||||||||||||||||||||||||||||
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CRH01(TE85L) | - | |
9197 | 0.00000000 | Toshiba Semiconductor and Storage | - | Cut Tape (CT) | Obsolete | Surface Mount | SOD-123F | CRH01 | Standard | S-FLAT (1.6x3.5) | download | RoHS non-compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 3,000 | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | 980 mV @ 1 A | 35 ns | 10 µA @ 200 V | -40°C ~ 150°C | 1A | - | ||||||||||||||||||||||||||||||||
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2SC5201,T6MURAF(J | - | |
3172 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SC5201 | 900 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 1 | 600 V | 50 mA | 1µA (ICBO) | NPN | 1V @ 500mA, 20mA | 100 @ 20mA, 5V | - | |||||||||||||||||||||||||||||||||
|
CBS10F40,L3F | 0.4300 | |
10 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOD-882 | CBS10F40 | Schottky | CST2B | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 10,000 | Fast Recovery =< 500ns, > 200mA (Io) | 40 V | 700 mV @ 1 A | 20 µA @ 40 V | 150°C (Max) | 1A | 74pF @ 0V, 1MHz | |||||||||||||||||||||||||||||||||
 |
2SK3309(TE24L,Q) | - | |
7505 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2SK3309 | MOSFET (Metal Oxide) | TO-220SM | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 450 V | 10A (Ta) | 10V | 650mOhm @ 5A, 10V | 5V @ 1mA | 23 nC @ 10 V | ±30V | 920 pF @ 10 V | - | 65W (Tc) | |||||||||||||||||||||||||||||
 |
ULN2803AFWG,C,EL | - | |
4777 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | -40°C ~ 85°C (TA) | Surface Mount | 18-SOIC (0.295", 7.50mm Width) | ULN2803 | 1.31W | 18-SOP | download | 1 (Unlimited) | EAR99 | 8541.29.0075 | 1,000 | 50V | 500mA | - | 8 NPN Darlington | 1.6V @ 500µA, 350mA | 1000 @ 350mA, 2V | - | |||||||||||||||||||||||||||||||||
 |
TK60P03M1,RQ(S | - | |
6408 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI-H | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK60P03 | MOSFET (Metal Oxide) | DPAK | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 30 V | 60A (Ta) | 4.5V, 10V | 6.4mOhm @ 30A, 10V | 2.3V @ 500µA | 40 nC @ 10 V | ±20V | 2700 pF @ 10 V | - | 63W (Tc) | ||||||||||||||||||||||||||||
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RN2108,LXHF(CT | 0.3300 | |
6 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | SC-75, SOT-416 | RN2108 | 100 mW | SSM | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50 V | 100 mA | 500nA | PNP - Pre-Biased | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 200 MHz | 22 kOhms | 47 kOhms | ||||||||||||||||||||||||||||||||
 |
TRS12E65C,S1Q | - | |
6681 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Obsolete | Through Hole | TO-220-2 | TRS12E65 | SiC (Silicon Carbide) Schottky | TO-220-2L | - | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 50 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 12 A | 0 ns | 90 µA @ 170 V | 175°C (Max) | 12A | 65pF @ 650V, 1MHz | ||||||||||||||||||||||||||||||||
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CMS02(TE12L) | - | |
6247 | 0.00000000 | Toshiba Semiconductor and Storage | - | Cut Tape (CT) | Obsolete | Surface Mount | SOD-128 | CMS02 | Schottky | M-FLAT (2.4x3.8) | download | RoHS non-compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 3,000 | Fast Recovery =< 500ns, > 200mA (Io) | 30 V | 400 mV @ 3 A | 500 µA @ 30 V | -40°C ~ 125°C | 3A | - | |||||||||||||||||||||||||||||||||
 |
1SV282TPH3F | 0.0886 | |
1657 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Not For New Designs | 125°C (TJ) | Surface Mount | SC-79, SOD-523 | 1SV282 | ESC | - | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 4,000 | 3pF @ 25V, 1MHz | Single | 34 V | 12.5 | C2/C25 | - | ||||||||||||||||||||||||||||||||||
|
RN4908(T5L,F,T) | - | |
6703 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | Surface Mount | 6-TSSOP, SC-88, SOT-363 | RN4908 | 200mW | US6 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 100nA (ICBO) | 1 NPN, 1 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 200MHz | 22kOhms | 47kOhms | ||||||||||||||||||||||||||||||||
|
CLS02(T6L,CLAR,Q) | - | |
2894 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | Surface Mount | L-FLAT™ | CLS02 | Schottky | L-FLAT™ (4x5.5) | download | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1 | Fast Recovery =< 500ns, > 200mA (Io) | 40 V | 550 mV @ 10 A | 1 mA @ 40 V | -40°C ~ 125°C | 10A | 420pF @ 10V, 1MHz | ||||||||||||||||||||||||||||||||||
 |
TPH9R00CQH,LQ | 2.0000 | |
7 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-PowerVDFN | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | download | 1 (Unlimited) | 264-TPH9R00CQHLQTR | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 150 V | 64A (Tc) | 8V, 10V | 9mOhm @ 32A, 10V | 4.3V @ 1mA | 44 nC @ 10 V | ±20V | 5400 pF @ 75 V | - | 960mW (Ta), 210W (Tc) |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
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