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Discrete Semiconductor Products(2909)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Input Type | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | Other Names | ECCN | HTSUS | Standard Package | Configuration | Speed | FET Type | Test Condition | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Diode Configuration | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) (per Diode) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | IGBT Type | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Current - Collector Pulsed (Icm) | Vce(on) (Max) @ Vge, Ic | Switching Energy | Td (on/off) @ 25°C | Current - Collector Cutoff (Max) | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Resistor - Base (R1) | Resistor - Emitter Base (R2) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
TK20S06K3L(T6L1,NQ | - |  |
3491 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIV | Tape & Reel (TR) | Obsolete | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK20S06 | MOSFET (Metal Oxide) | DPAK+ | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 60 V | 20A (Ta) | 6V, 10V | 29mOhm @ 10A, 10V | 3V @ 1mA | 18 nC @ 10 V | ±20V | 780 pF @ 10 V | - | 38W (Tc) | ||||||||||||||||||||||||||||||
 |
RN2418,LXHF | 0.3400 | |
6 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | TO-236-3, SC-59, SOT-23-3 | RN2418 | 200 mW | S-Mini | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50 V | 100 mA | 500nA | PNP - Pre-Biased | 300mV @ 250µA, 5mA | 50 @ 10mA, 5V | 200 MHz | 47 kOhms | 10 kOhms | ||||||||||||||||||||||||||||||||||
 |
GT8G133(TE12L,Q) | - | |
4443 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | GT8G133 | Standard | 600 mW | 8-TSSOP | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | - | - | 400 V | 150 A | 2.9V @ 4V, 150A | - | 1.7µs/2µs | ||||||||||||||||||||||||||||||||||
 |
SSM6P69NU,LF | 0.4300 | |
10 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | 6-WDFN Exposed Pad | SSM6P69 | MOSFET (Metal Oxide) | 1W (Ta) | 6-µDFN (2x2) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | 2 P-Channel (Dual) | 20V | 4A (Ta) | 45mOhm @ 3.5A, 10V | 1.2V @ 1mA | 6.74nC @ 4.5V | 480pF @ 10V | Logic Level Gate, 1.8V Drive | ||||||||||||||||||||||||||||||||
 |
SSM3J35AFS,LF | 0.2600 | |
15 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVII | Tape & Reel (TR) | Active | 150°C | Surface Mount | SC-75, SOT-416 | SSM3J35 | MOSFET (Metal Oxide) | SSM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | P-Channel | 20 V | 250mA (Ta) | 1.2V, 4.5V | 1.4Ohm @ 150mA, 4.5V | 1V @ 100µA | ±10V | 42 pF @ 10 V | - | 150mW (Ta) | |||||||||||||||||||||||||||||||
 |
RN1305,LXHF | 0.3900 | |
6080 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | SC-70, SOT-323 | RN1305 | 100 mW | SC-70 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50 V | 100 mA | 500nA | NPN - Pre-Biased | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 250 MHz | 2.2 kOhms | 47 kOhms | ||||||||||||||||||||||||||||||||||
 |
SSM3J135TU,LF | 0.3700 | |
20 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 150°C | Surface Mount | 3-SMD, Flat Leads | SSM3J135 | MOSFET (Metal Oxide) | UFM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | P-Channel | 20 V | 3A (Ta) | 1.5V, 4.5V | 103mOhm @ 1A, 4.5V | 1V @ 1mA | 4.6 nC @ 4.5 V | ±8V | 270 pF @ 10 V | - | 500mW (Ta) | ||||||||||||||||||||||||||||||
 |
SSM6L35FU(TE85L,F) | 0.4000 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SSM6L35 | MOSFET (Metal Oxide) | 200mW | US6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N and P-Channel | 20V | 180mA, 100mA | 3Ohm @ 50mA, 4V | 1V @ 1mA | - | 9.5pF @ 3V | Logic Level Gate, 1.2V Drive | ||||||||||||||||||||||||||||||||
|
RN1301,LXHF | 0.3900 | |
11 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | SC-70, SOT-323 | RN1301 | 100 mW | SC-70 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50 V | 100 mA | 500nA | NPN - Pre-Biased | 300mV @ 250µA, 5mA | 30 @ 10mA, 5V | 250 MHz | 4.7 kOhms | 4.7 kOhms | ||||||||||||||||||||||||||||||||||
 |
TRS2E65H,S1Q | 1.5500 | |
300 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | Through Hole | TO-220-2 | SiC (Silicon Carbide) Schottky | TO-220-2L | - | ROHS3 Compliant | 1 (Unlimited) | 264-TRS2E65H,S1Q | EAR99 | 8541.10.0080 | 50 | No Recovery Time > 500mA (Io) | 650 V | 1.35 V @ 2 A | 0 ns | 40 µA @ 650 V | 175°C | 2A | 135pF @ 1V, 1MHz | ||||||||||||||||||||||||||||||||||
 |
TK430A60F,S4X(S | - | |
5192 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX | Bulk | Active | 150°C | Through Hole | TO-220-3 Full Pack | MOSFET (Metal Oxide) | TO-220SIS | download | EAR99 | 8541.29.0095 | 1 | N-Channel | 600 V | 13A (Ta) | 10V | 430mOhm @ 6.5A, 10V | 4V @ 1.75mA | 48 nC @ 10 V | ±30V | 1940 pF @ 300 V | - | 45W (Tc) | |||||||||||||||||||||||||||||||||
 |
2SC2229-Y(MIT1,F,M | - | |
1503 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SC2229 | 800 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1 | 150 V | 50 mA | 100nA (ICBO) | NPN | 500mV @ 1mA, 10mA | 70 @ 10mA, 5V | 120MHz | |||||||||||||||||||||||||||||||||||
|
RN2416,LF | 0.1800 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | TO-236-3, SC-59, SOT-23-3 | RN2416 | 200 mW | S-Mini | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 500nA | PNP - Pre-Biased | 300mV @ 250µA, 5mA | 50 @ 10mA, 5V | 200 MHz | 4.7 kOhms | 10 kOhms | |||||||||||||||||||||||||||||||||
 |
HN4D01JU(TE85L,F) | 0.4100 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 5-TSSOP, SC-70-5, SOT-353 | HN4D01 | Standard | 5-SSOP | download | RoHS non-compliant | 1 (Unlimited) | EAR99 | 8541.10.0070 | 3,000 | Small Signal =< 200mA (Io), Any Speed | 1 Pair Common Anode | 80 V | 100mA | 1.2 V @ 100 mA | 1.6 ns | 500 nA @ 80 V | 150°C (Max) | ||||||||||||||||||||||||||||||||||
 |
TRS2E65F,S1Q | 1.0500 | |
1763 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | Through Hole | TO-220-2 | TRS2E65 | SiC (Silicon Carbide) Schottky | TO-220-2L | - | EAR99 | 8541.10.0080 | 50 | No Recovery Time > 500mA (Io) | 650 V | 1.6 V @ 2 A | 0 ns | 20 µA @ 650 V | 175°C (Max) | 2A | 8.7pF @ 650V, 1MHz | ||||||||||||||||||||||||||||||||||||
 |
RN2701,LF | 0.3000 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 5-TSSOP, SC-70-5, SOT-353 | RN2701 | 200mW | USV | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50V | 100mA | 500nA | 2 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 30 @ 10mA, 5V | 200MHz | 4.7kOhms | 4.7kOhms | |||||||||||||||||||||||||||||||||
|
TK5P50D(T6RSS-Q) | 1.2900 | |
8949 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK5P50 | MOSFET (Metal Oxide) | D-Pak | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 500 V | 5A (Ta) | 10V | 1.5Ohm @ 2.5A, 10V | 4.4V @ 1mA | 11 nC @ 10 V | ±30V | 490 pF @ 25 V | - | 80W (Tc) | ||||||||||||||||||||||||||||||
|
TK25V60X,LQ | 2.5193 | |
9782 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV-H | Tape & Reel (TR) | Active | 150°C | Surface Mount | 4-VSFN Exposed Pad | TK25V60 | MOSFET (Metal Oxide) | 4-DFN-EP (8x8) | download | ROHS3 Compliant | 1 (Unlimited) | TK25V60XLQ | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 600 V | 25A (Ta) | 10V | 135mOhm @ 7.5A, 10V | 3.5V @ 1.2mA | 40 nC @ 10 V | ±30V | 2400 pF @ 300 V | - | 180W (Tc) | |||||||||||||||||||||||||||||
 |
RN1703JE(TE85L,F) | 0.4700 | |
7 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOT-553 | RN1703 | 100mW | ESV | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 50V | 100mA | 100nA (ICBO) | 2 NPN - Pre-Biased (Dual) (Emitter Coupled) | 300mV @ 250µA, 5mA | 70 @ 10mA, 5V | 250MHz | 22kOhms | 22kOhms | |||||||||||||||||||||||||||||||||
 |
2SJ305TE85LF | 0.5400 | |
21 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 2SJ305 | MOSFET (Metal Oxide) | SC-59 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | P-Channel | 30 V | 200mA (Ta) | 2.5V | 4Ohm @ 50mA, 2.5V | - | ±20V | 92 pF @ 3 V | - | 200mW (Ta) | |||||||||||||||||||||||||||||||
 |
RN1314,LF | 0.1800 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | SC-70, SOT-323 | RN1314 | 100 mW | USM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 500nA | NPN - Pre-Biased | 300mV @ 250µA, 5mA | 50 @ 10mA, 5V | 250 MHz | 1 kOhms | 10 kOhms | |||||||||||||||||||||||||||||||||
|
RN1112,LXHF(CT | 0.0624 | |
6 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | SC-75, SOT-416 | RN1112 | 100 mW | SSM | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50 V | 100 mA | 100nA (ICBO) | NPN - Pre-Biased | 300mV @ 250µA, 5mA | 120 @ 1mA, 5V | 250 MHz | 22 kOhms | |||||||||||||||||||||||||||||||||||
|
SSM3K17FU,LF | 0.3300 | |
62 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSV | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | SC-70, SOT-323 | SSM3K17 | MOSFET (Metal Oxide) | USM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 50 V | 100mA (Ta) | 2.5V, 4V | 20Ohm @ 10mA, 4V | 1.5V @ 1µA | ±7V | 7 pF @ 3 V | - | 150mW (Ta) | |||||||||||||||||||||||||||||||
|
TRS4E65H,S1Q | 1.8500 | |
400 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | Through Hole | TO-220-2 | SiC (Silicon Carbide) Schottky | TO-220-2L | - | ROHS3 Compliant | 1 (Unlimited) | 264-TRS4E65H,S1Q | EAR99 | 8541.10.0080 | 50 | No Recovery Time > 500mA (Io) | 650 V | 1.35 V @ 4 A | 0 ns | 55 µA @ 650 V | 175°C | 4A | 263pF @ 1V, 1MHz | ||||||||||||||||||||||||||||||||||
|
SSM3K15AFS,LF | 0.2800 | |
107 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIII | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | SC-75, SOT-416 | SSM3K15 | MOSFET (Metal Oxide) | SSM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 30 V | 100mA (Ta) | 2.5V, 4V | 3.6Ohm @ 10mA, 4V | 1.5V @ 100µA | ±20V | 13.5 pF @ 3 V | - | 100mW (Ta) | |||||||||||||||||||||||||||||||
 |
SSM3J371R,LXHF | 0.4000 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101, U-MOSVI | Tape & Reel (TR) | Active | 150°C | Surface Mount | SOT-23-3 Flat Leads | MOSFET (Metal Oxide) | SOT-23F | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 20 V | 4A (Ta) | 1.5V, 4.5V | 55mOhm @ 3A, 4.5V | 1V @ 1mA | 10.4 nC @ 4.5 V | +6V, -8V | 630 pF @ 10 V | - | 1W (Ta) | ||||||||||||||||||||||||||||||||
|
TK11S10N1L,LQ | 0.9400 | |
6545 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK11S10 | MOSFET (Metal Oxide) | DPAK+ | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 100 V | 11A (Ta) | 4.5V, 10V | 28mOhm @ 5.5A, 10V | 2.5V @ 100µA | 15 nC @ 10 V | ±20V | 850 pF @ 10 V | - | 65W (Tc) | ||||||||||||||||||||||||||||||
|
TK4R3A06PL,S4X | 1.3300 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX-H | Tube | Active | 175°C (TJ) | Through Hole | TO-220-3 Full Pack | TK4R3A06 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | Not Applicable | EAR99 | 8541.29.0095 | 50 | N-Channel | 60 V | 68A (Tc) | 4.5V, 10V | 7.2mOhm @ 15A, 4.5V | 2.5V @ 500µA | 48.2 nC @ 10 V | ±20V | 3280 pF @ 30 V | - | 36W (Tc) | ||||||||||||||||||||||||||||||
 |
TPH1R204PB,L1Q | 1.5500 | |
31 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-PowerVDFN | TPH1R204 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 40 V | 150A (Tc) | 6V, 10V | 1.2mOhm @ 50A, 10V | 3V @ 500µA | 62 nC @ 10 V | ±20V | 5855 pF @ 20 V | - | 960mW (Ta), 132W (Tc) | |||||||||||||||||||||||||||||||
 |
RN4981FE,LXHF(CT | 0.3800 | |
7 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | SOT-563, SOT-666 | RN4981 | 100mW | ES6 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 50V | 100mA | 500nA | 1 NPN, 1 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 30 @ 10mA, 5V | 250MHz, 200MHz | 4.7kOhms | 4.7kOhms |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
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